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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/33761
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dc.contributor.authorBowen, M.-
dc.contributor.authorCros, V.-
dc.contributor.authorPetroff, F.-
dc.contributor.authorFert, Albert, 1938--
dc.contributor.authorMartínez Boubeta, José Carlos-
dc.contributor.authorCosta Krämer, José Luis-
dc.contributor.authorAnguita, José Virgilio-
dc.contributor.authorCebollada, Alfonso-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.contributor.authorTeresa, J. M. de-
dc.contributor.authorMorellon, L.-
dc.contributor.authorIbarra, M. R.-
dc.contributor.authorGüell Vilà, Frank-
dc.contributor.authorPeiró Martínez, Francisca-
dc.contributor.authorCornet i Calveras, Albert-
dc.date.accessioned2013-02-08T08:44:21Z-
dc.date.available2013-02-08T08:44:21Z-
dc.date.issued2001-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2445/33761-
dc.description.abstractWe present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.-
dc.format.extent3 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1404125-
dc.relation.ispartofApplied Physics Letters, 2001, vol. 79, num. 11, p. 1655-1657-
dc.relation.urihttp://dx.doi.org/10.1063/1.1404125-
dc.rights(c) American Institute of Physics , 2001-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationMagnetoresistència-
dc.subject.classificationDispositius de memòria d'ordinador-
dc.subject.classificationMicroelectrònica-
dc.subject.classificationEfecte túnel-
dc.subject.classificationFerro-
dc.subject.otherMagnetoresistance-
dc.subject.otherComputer storage devices-
dc.subject.otherMicroelectronics-
dc.subject.otherTunneling (Physics)-
dc.subject.otherIron-
dc.titleLarge Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec543127-
dc.date.updated2013-02-08T08:44:21Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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