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Title: | Uniformity Study of Amorphous and Microcrystalline Silicon Thin Films Deposited on 10cmx10cm Glass Substrate using Hot Wire CVD Technique |
Author: | Frigeri, Paolo Antonio Nos Aguilà, Oriol Calvo, J. D. Carreras Seguí, Paz Roldán Molinero, Rubén Antony, Aldrin Asensi López, José Miguel Bertomeu i Balagueró, Joan |
Keywords: | Cèl·lules solars Deposició química en fase vapor Silici Pel·lícules fines Solar cells Chemical vapor deposition Silicon Thin films |
Issue Date: | 2010 |
Publisher: | Wiley-VCH |
Abstract: | The scaling up of the Hot Wire Chemical Vapor Deposition (HW-CVD) technique to large deposition area can be done using a catalytic net of equal spaced parallel filaments. The large area deposition limit is defined as the limit whenever a further increment of the catalytic net area does not affect the properties of the deposited film. This is the case when a dense catalytic net is spread on a surface considerably larger than that of the film substrate. To study this limit, a system able to hold a net of twelve wires covering a surface of about 20 cm x 20 cm was used to deposit amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon over a substrate of 10 cm x 10 cm placed at a filament-substrate distance ranging from 1 to 2 cm. The uniformity of the film thickness d and optical constants, n(x, λ) and α(x,¯hω), was studied via transmission measurements. The thin film uniformity as a function of the filament-substrate distance was studied. The experimental thickness profile was compared with the theoretical result obtained solving the diffusion equations. The optimization of the filament-substrate distance allowed obtaining films with inhomogeneities lower than ±2.5% and deposition rates higher than 1 nm/s and 4.5 nm/s for (μc-Si:H) and (a-Si:H), respectively. |
Note: | Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssc.200982827 |
It is part of: | physica status solidi (c), 2010, vol. 7, num. 3-4, p. 588-591 |
URI: | http://hdl.handle.net/2445/47154 |
Related resource: | http://dx.doi.org/10.1002/pssc.200982827 |
ISSN: | 1862-6351 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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