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http://hdl.handle.net/2445/47155
Title: | Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC) |
Author: | Villar, Fernando Antony, Aldrin Escarré i Palou, Jordi Ibarz, D. Roldán Molinero, Rubén Stella, Marco Muñoz Ramos, David Asensi López, José Miguel Bertomeu i Balagueró, Joan |
Keywords: | Silici Cèl·lules solars Semiconductors amorfs Deposició química en fase vapor Temperatures baixes Silicon Solar cells Amorphous semiconductors Chemical vapor deposition Low temperatures |
Issue Date: | 2009 |
Publisher: | Elsevier B.V. |
Abstract: | Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2009.01.074 |
It is part of: | Thin Solid Films, 2009, vol. 517, num. 12, p. 3575-3577 |
URI: | http://hdl.handle.net/2445/47155 |
Related resource: | http://dx.doi.org/10.1016/j.tsf.2009.01.074 |
ISSN: | 0040-6090 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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