Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/47295
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Soler Vilamitjana, David | - |
dc.contributor.author | Escarré i Palou, Jordi | - |
dc.contributor.author | Asensi López, José Miguel | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2013-10-25T11:00:03Z | - |
dc.date.available | 2013-10-25T11:00:03Z | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47295 | - |
dc.description.abstract | In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125 °C. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen. | - |
dc.format.extent | 13 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.jnoncrysol.2004.03.070 | - |
dc.relation.ispartof | Journal of non-Crystalline Solids, 2004, vol. 338-340, p. 659-662 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.jnoncrysol.2004.03.070 | - |
dc.rights | (c) Elsevier B.V., 2004 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.other | Solar cells | - |
dc.subject.other | Silicon | - |
dc.subject.other | Chemical vapor deposition | - |
dc.title | Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 510103 | - |
dc.date.updated | 2013-10-25T11:00:03Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
510103.pdf | 200.69 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.