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http://hdl.handle.net/2445/47298
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DC Field | Value | Language |
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dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Soler Vilamitjana, David | - |
dc.contributor.author | Escarré i Palou, Jordi | - |
dc.contributor.author | Villar, Fernando | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.contributor.author | Saboundji, A. | - |
dc.contributor.author | Coulon, N. | - |
dc.contributor.author | Mohammed-Brahim, T. | - |
dc.date.accessioned | 2013-10-25T11:14:30Z | - |
dc.date.available | 2013-10-25T11:14:30Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47298 | - |
dc.description.abstract | Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V). | - |
dc.format.extent | 13 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.217 | - |
dc.relation.ispartof | Thin Solid Films, 2006, vol. 501, num. 1-2, p. 303-306 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.tsf.2005.07.217 | - |
dc.rights | (c) Elsevier B.V., 2006 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Transistors | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Nanocristalls | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.other | Transistors | - |
dc.subject.other | Thin films | - |
dc.subject.other | Silicon | - |
dc.subject.other | Nanocrystals | - |
dc.subject.other | Chemical vapor deposition | - |
dc.title | Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 525191 | - |
dc.date.updated | 2013-10-25T11:14:30Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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525191.pdf | 175.94 kB | Adobe PDF | View/Open |
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