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http://hdl.handle.net/2445/47367
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DC Field | Value | Language |
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dc.contributor.author | Soler Vilamitjana, David | - |
dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Asensi López, José Miguel | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2013-10-29T12:47:52Z | - |
dc.date.available | 2013-10-29T12:47:52Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47367 | - |
dc.description.abstract | We present structural and electrical properties for p- and n-type layers grown close to the transition between a-Si:H and nc-Si:H onto different substrates: Corning 1737 glass, ZnO:Al-coated glass and stainless steel. Structural properties were observed to depend on the substrate properties for samples grown under the same deposition conditions. Different behaviour was observed for n- and p-type material. Stainless steel seemed to enhance crystallinity when dealing with n-type layers, whereas an increased crystalline fraction was obtained on glass for p-type samples. Electrical conduction in the direction perpendicular to the substrate seemed to be mainly determined by the interfaces or by the existence of an amorphous incubation layer that might determine the electrical behaviour. In the direction perpendicular to the substrate, n-type layers exhibited a lower resistance value than p-type ones, showing better contact properties between the layer and the substrate. | - |
dc.format.extent | 13 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(03)00095-6 | - |
dc.relation.ispartof | Thin Solid Films, 2003, vol. 430, num. 1-2, p. 157-160 | - |
dc.relation.uri | http://dx.doi.org/10.1016/S0040-6090(03)00095-6 | - |
dc.rights | (c) Elsevier B.V., 2003 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Catàlisi | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Nanocristalls | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Propietats elèctriques | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Catalysis | - |
dc.subject.other | Silicon | - |
dc.subject.other | Nanocrystals | - |
dc.subject.other | Solar cells | - |
dc.subject.other | Thin films | - |
dc.subject.other | Electric properties | - |
dc.title | Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 507389 | - |
dc.date.updated | 2013-10-29T12:47:52Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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507389.pdf | 192 kB | Adobe PDF | View/Open |
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