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http://hdl.handle.net/2445/47417
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DC Field | Value | Language |
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dc.contributor.author | Puigdollers i González, Joaquim | - |
dc.contributor.author | Orpella, Albert | - |
dc.contributor.author | Dosev, D. | - |
dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Pallarés Curto, Jordi | - |
dc.contributor.author | Marsal Garví, Lluís F. (Lluís Francesc) | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.contributor.author | Alcubilla González, Ramón | - |
dc.contributor.author | Peiró, D. | - |
dc.date.accessioned | 2013-10-31T11:46:57Z | - |
dc.date.available | 2013-10-31T11:46:57Z | - |
dc.date.issued | 2000 | - |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47417 | - |
dc.description.abstract | Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material. | - |
dc.format.extent | 15 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0022-3093(99)00942-4 | - |
dc.relation.ispartof | Journal of non-Crystalline Solids, 2000, vol. 266-269, num. 2, p. 1304-1309 | - |
dc.relation.uri | http://dx.doi.org/10.1016/S0022-3093(99)00942-4 | - |
dc.rights | (c) Elsevier B.V., 2000 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Transistors | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Temperatures baixes | - |
dc.subject.classification | Semiconductors amorfs | - |
dc.subject.other | Silicon | - |
dc.subject.other | Thin films | - |
dc.subject.other | Transistors | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Low temperatures | - |
dc.subject.other | Amorphous semiconductors | - |
dc.title | Thin Film Transistors obtained by Hot-Wire CVD | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 147808 | - |
dc.date.updated | 2013-10-31T11:46:57Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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147808.pdf | 107.28 kB | Adobe PDF | View/Open |
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