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http://hdl.handle.net/2445/47504| Title: | On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers |
| Author: | Bertomeu i Balagueró, Joan Puigdollers i González, Joaquim Asensi López, José Miguel Andreu i Batallé, Jordi |
| Keywords: | Semiconductors amorfs Optoelectrònica Espectroscòpia Silici Semimetalls Amorphous semiconductors Optoelectronics Spectrum analysis Silicon Semimetals |
| Issue Date: | 1993 |
| Publisher: | Elsevier B.V. |
| Abstract: | This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states. |
| Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N |
| It is part of: | Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864 |
| URI: | http://hdl.handle.net/2445/47504 |
| Related resource: | http://dx.doi.org/10.1016/0022-3093(93)91133-N |
| ISSN: | 0022-3093 |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 088431.pdf | 119.49 kB | Adobe PDF | View/Open |
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