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http://hdl.handle.net/2445/47603
Title: | Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder |
Author: | Bertomeu i Balagueró, Joan Asensi López, José Miguel Puigdollers i González, Joaquim Andreu i Batallé, Jordi Morenza Gil, José Luis |
Keywords: | Silici Semiconductors amorfs Cèl·lules solars Pel·lícules fines Transistors Nanotecnologia Deposició química en fase vapor Silicon Amorphous semiconductors Solar cells Thin films Transistors Nanotechnology Chemical vapor deposition |
Issue Date: | 1993 |
Publisher: | Elsevier Ltd |
Abstract: | This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/0042-207X(93)90361-D |
It is part of: | Vacuum, 1993, vol. 44, num. 2, p. 129-134 |
URI: | http://hdl.handle.net/2445/47603 |
Related resource: | http://dx.doi.org/10.1016/0042-207X(93)90361-D |
ISSN: | 0042-207X |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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