Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi

Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47604

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DC Field	Value	Language
dc.contributor.author	Bertomeu i Balagueró, Joan	-
dc.contributor.author	Puigdollers i González, Joaquim	-
dc.contributor.author	Asensi López, José Miguel	-
dc.contributor.author	Andreu i Batallé, Jordi	-
dc.date.accessioned	2013-11-08T08:06:02Z	-
dc.date.available	2013-11-08T08:06:02Z	-
dc.date.issued	1997	-
dc.identifier.issn	0169-4332	-
dc.identifier.uri	http://hdl.handle.net/2445/47604	-
dc.description.abstract	Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.	-
dc.format.extent	21 p.	-
dc.format.mimetype	application/pdf	-
dc.language.iso	eng	-
dc.publisher	Elsevier B.V.	-
dc.relation.isformatof	Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0169-4332(96)00600-9	-
dc.relation.ispartof	Applied Surface Science, 1997, vol. 108, num. 2, p. 211-217	-
dc.relation.uri	http://dx.doi.org/10.1016/S0169-4332(96)00600-9	-
dc.rights	(c) Elsevier B.V., 1997	-
dc.source	Articles publicats en revistes (Física Aplicada)	-
dc.subject.classification	Espectroscòpia infraroja	-
dc.subject.classification	Pel·lícules fines	-
dc.subject.classification	Hidrogen	-
dc.subject.classification	Semiconductors amorfs	-
dc.subject.classification	Porositat	-
dc.subject.other	Infrared spectroscopy	-
dc.subject.other	Thin films	-
dc.subject.other	Hydrogen	-
dc.subject.other	Amorphous semiconductors	-
dc.subject.other	Porosity	-
dc.title	Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces	-
dc.type	info:eu-repo/semantics/article	-
dc.type	info:eu-repo/semantics/acceptedVersion	-
dc.identifier.idgrec	113130	-
dc.date.updated	2013-11-08T08:06:03Z	-
dc.rights.accessRights	info:eu-repo/semantics/openAccess	-
Appears in Collections:	Articles publicats en revistes (Física Aplicada)

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