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http://hdl.handle.net/2445/50485| Title: | Resistance Switching in Transparent Magnetic MgO Films |
| Author: | Jambois, Olivier Carreras Seguí, Paz Antony, Aldrin Bertomeu i Balagueró, Joan Martínez Boubeta, José Carlos |
| Keywords: | Òxid de magnesi Pel·lícules fines Espintrònica Ferromagnetisme Matèria condensada Magnesium oxide Thin films Spintronics Ferromagnetism Condensed matter |
| Issue Date: | 2011 |
| Publisher: | Elsevier Ltd |
| Abstract: | We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage. |
| Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.ssc.2011.10.009 |
| It is part of: | Solid State Communications, 2011, vol. 151, num. 24, p. 1856-1859 |
| URI: | http://hdl.handle.net/2445/50485 |
| Related resource: | http://dx.doi.org/10.1016/j.ssc.2011.10.009 |
| ISSN: | 0038-1098 |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 599785.pdf | 415.88 kB | Adobe PDF | View/Open |
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