Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/67161
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Vilella Figueras, Eva | - |
dc.contributor.author | Vilà i Arbonès, Anna Maria | - |
dc.contributor.author | Palacio, Fernando | - |
dc.contributor.author | López de Miguel, Manuel | - |
dc.contributor.author | Diéguez Barrientos, Àngel | - |
dc.date.accessioned | 2015-10-07T08:22:23Z | - |
dc.date.available | 2015-10-07T08:22:23Z | - |
dc.date.issued | 2014-11-26 | - |
dc.identifier.issn | 1877-7058 | - |
dc.identifier.uri | http://hdl.handle.net/2445/67161 | - |
dc.description.abstract | Linear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communications and quantum information. In this work, we present a linear-mode APD fabricated in a 0.35 µm CMOS process and report its noise and gain characterization by means of two different experimental set-ups. Good matching is observed between the results obtained by means of the two different methods. | - |
dc.format.extent | 4 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier | - |
dc.relation.isformatof | Reproducció del document publicat a: http://ac.els-cdn.com/S1877705814027556/1-s2.0-S1877705814027556-main.pdf?_tid=198687e8-6369-11e5-a4ea-00000aab0f26&acdnat=1443174055_ae2c94dc43aa0be9 | - |
dc.relation.ispartof | Procedia Engineering, 2014, vol. 87, p. 728-731 | - |
dc.rights | cc-by-nc-nd (c) Vilella Figueras, Eva et al., 2014 | - |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Metall-òxid-semiconductors complementaris | - |
dc.subject.classification | Col·lisions (Física nuclear) | - |
dc.subject.classification | Circuits electrònics | - |
dc.subject.other | Complementary metal oxide semiconductors | - |
dc.subject.other | Collisions (Nuclear physics) | - |
dc.subject.other | Electronic circuits | - |
dc.title | Characterization of linear-mode avalanche photodiodes in standard CMOS | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 644840 | - |
dc.date.updated | 2015-10-07T08:22:23Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/614168/EU//SEA-ON-A-CHIP | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
644840.pdf | 786.89 kB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License