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| Issue Date | Title | Author(s) |
|---|---|---|
| 2001 | Stability of hydrogenated nanocrystalline silicon thin-film transistors | Orpella, Albert; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi; Alcubilla González, Ramón |
| 2006 | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Villar, Fernando; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2001 | Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition | Voz Sánchez, Cristóbal; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi |
| 2002 | Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2003 | Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD | Soler Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2004 | Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |