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| Issue Date | Title | Author(s) |
|---|---|---|
| 2003 | Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD | Soler Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2005 | Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC) | Saboundji, A.; Coulon, N.; Gorin, A.; Lhermite, H.; Mohammed-Brahim, T.; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2004 | Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2002 | Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD | Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella, Albert; Martin Garcia, Isidro; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón |
| 2001 | Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition | Dosev, D.; Puigdollers i González, Joaquim; Orpella, Albert; Voz Sánchez, Cristóbal; Fonrodona Turon, Marta; Soler Vilamitjana, David; Marsal Garví, Lluís F. (Lluís Francesc); Pallarés Curto, Jordi; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón |
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