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| Issue Date | Title | Author(s) |
|---|---|---|
| 1992 | Light induced defects in thermal annealed hydrogenated amorphous silicon | Serra-Miralles, J.; Bertomeu i Balagueró, Joan; Sardin, Georges; Roch i Cunill, Carles; Asensi López, José Miguel; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 1993 | On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers | Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi |
| 1995 | Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition | Polo Trasancos, Ma. del Carmen; Peiró Martínez, Francisca; Cifre, J.; Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi |
| 1991 | Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy | Serra-Miralles, J.; Andreu i Batallé, Jordi; Sardin, Georges; Roch i Cunill, Carles; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Esteve Pujol, Joan |
| 1994 | Polycrystalline silicon films obtained by hot-wire chemical vapour deposition | Cifre, J.; Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Polo Trasancos, Ma. del Carmen; Andreu i Batallé, Jordi; Lloret, A. |
| 1995 | P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition | Puigdollers i González, Joaquim; Cifre, J.; Polo Trasancos, Ma. del Carmen; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Lloret, A. |
| 1997 | Stress measurements in polycrystalline silicon films grown by hot-wire chemical vapor deposition | Peiró, D.; Bertomeu i Balagueró, Joan; Arrando Comas, Francesc; Andreu i Batallé, Jordi |
| 1996 | New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy | Roca i Cabarrocas, P. (Pere); Hamma, S.; Hadjadj, A.; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 1993 | Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder | Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 1999 | Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD | Stöger, M.; Breymesser, A.; Schlosser, V.; Ramadori, M.; Plunger, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Nelhiebel, M.; Schattschneider, P.; Andreu i Batallé, Jordi |
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