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http://hdl.handle.net/2445/8584
Title: | Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules |
Author: | Merten, Jens Asensi López, José Miguel Voz Sánchez, Cristóbal Shah, A. V. Platz, R. Andreu i Batallé, Jordi |
Keywords: | Amorphous silicon solar cells and modules Semiconductors amorfs Hidrogen Silicones Cèl·lules solars Semiconductors Amorphous semiconductors Electron-hole recombination Elemental semiconductors Equivalent circuits Hydrogen Losses Semiconductor device models Silicon Solar cells |
Issue Date: | 1998 |
Publisher: | IEEE |
Abstract: | An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation. |
Note: | Reproducció del document publicat a http://dx.doi.org/10.1109/16.658676 |
It is part of: | IEEE Transactions on Electron Devices, 1998, vol. 45, núm. 2, p. 423-429. |
URI: | http://hdl.handle.net/2445/8584 |
Related resource: | http://dx.doi.org/10.1109/16.658676 |
ISSN: | 0018-9383 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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