Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/8722
Title: | Hydrogen-induced piezoelectric effects in InP HEMT's |
Author: | Blanchard, Roxann R. Alamo, Jesús A. del Adams, Stephen B. Chao, P. C. Cornet i Calveras, Albert |
Keywords: | Piroelectricitat i piezoelectricitat Hidrogenació Hydrogenation Piezoelectricity Semiconductor device InP HEMT's |
Issue Date: | 1999 |
Publisher: | IEEE |
Abstract: | In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure. |
Note: | Reproducció del document publicat a http://dx.doi.org/10.1109/55.778153 |
It is part of: | IEEE Electron Device Letters, 1999, vol. 20, núm. 8, p. 393-395. |
URI: | http://hdl.handle.net/2445/8722 |
Related resource: | http://dx.doi.org/10.1109/55.778153 |
ISSN: | 0741-3106 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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