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http://hdl.handle.net/2445/8749
Title: | Hydrogen-induced changes in the breakdown voltage of InP HEMTs |
Author: | Blanchard, Roxann R. Alamo, Jesús A. del Cornet i Calveras, Albert |
Keywords: | Hidrogen Espectroscòpia de raigs X Transistors Hall mobility III-V semiconductors X-ray spectroscopy Failure analysis High electron mobility Transistors Hydrogen Indium compounds Semiconductor device breakdown |
Issue Date: | 2005 |
Publisher: | IEEE |
Abstract: | In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases following exposure to H2. This BVDG shift is nonrecoverable. The increase in BVDG is found to be due to a decrease in the carrier concentration in the extrinsic portion of the device.We provide evidence that H2 reacts with the exposed InAlAs surface in the extrinsic region next to the gate, changing the underlying carrier concentration. Hall measurements of capped and uncapped HEMT samples show that the decrease in sheet carrier concentration can be attributed to a modification of the exposed InAlAs surface. Consistent with this, XPS experiments on uncapped heterostructures give evidence of As loss from the InAlAs surface upon exposure to hydrogen. |
Note: | Reproducció del document publicat a http://dx.doi.org/10.1109/TDMR.2005.846825 |
It is part of: | IEEE Transactions On Device And Materials Reliability, 2005, vol. 5, núm. 2, p. 231-234. |
URI: | http://hdl.handle.net/2445/8749 |
Related resource: | http://dx.doi.org/10.1109/TDMR.2005.846825 |
ISSN: | 1530-4388 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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527741.pdf | 368.26 kB | Adobe PDF | View/Open |
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