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Title: | The configurational energy gap between amorphous and crystalline silicon |
Author: | Kail, F. Farjas Silva, Jordi Roura Grabulosa, Pere Secouard, C. Nos Aguilà, Oriol Bertomeu i Balagueró, Joan Roca i Cabarrocas, P. (Pere) |
Keywords: | Silici Cristal·lització Entalpia Calorimetria Silicon Crystallization Enthalpy Calorimetry |
Issue Date: | 19-Sep-2011 |
Publisher: | Wiley-VCH |
Abstract: | The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1002/pssr.201105333 |
It is part of: | physica status solidi (RRL) - Rapid Research Letters, 2011, vol. 5, num. 10-11, p. 361-363 |
URI: | http://hdl.handle.net/2445/98045 |
Related resource: | http://dx.doi.org/10.1002/pssr.201105333 |
ISSN: | 1862-6254 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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File | Description | Size | Format | |
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599025.pdf | 295.7 kB | Adobe PDF | View/Open |
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