1. Dipòsit Digital de la Universitat de Barcelona
  2. Treballs de l'alumnat
  3. Màster Oficial - Nanociència i Nanotecnologia
Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9822
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dc.contributor.advisorPeiró Martínez, Franciscacat
dc.contributor.advisorArbiol i Cobos, Jordicat
dc.contributor.authorConesa Boj, Sòniacat
dc.date.accessioned2009-10-27T11:17:00Z-
dc.date.available2009-10-27T11:17:00Z-
dc.date.issued2008-09-
dc.identifier.urihttp://hdl.handle.net/2445/9822-
dc.descriptionMàster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Coboscat
dc.description.abstractSemiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and hotoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown under different As4 pressures are studied, and the presence of different optoelectronic properties are discussed in relation to the crystalline structures and defects found.eng
dc.format.extent9 p.cat
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.rightscc-by-nc-nd (c) Conesa Boj, 2008cat
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/-
dc.sourceMàster Oficial - Nanociència i Nanotecnologia-
dc.subject.classificationNanotecnologiacat
dc.subject.classificationSemiconductorscat
dc.subject.classificationMicroscòpia electrònica de transmissiócat
dc.subject.classificationFotònicacat
dc.subject.classificationPropietats òptiquescat
dc.subject.classificationTreballs de fi de màstercat
dc.subject.otherNanotechnologyeng
dc.subject.otherSemiconductorseng
dc.subject.otherTransmission electron microscopyeng
dc.subject.otherPhotonicseng
dc.subject.otherOptical propertieseng
dc.subject.otherMaster's theseseng
dc.titleHRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic deviceseng
dc.typeinfo:eu-repo/semantics/masterThesiseng
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesseng
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