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Title: | Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition |
Author: | Dosev, D. Puigdollers i González, Joaquim Orpella, Albert Voz Sánchez, Cristóbal Fonrodona Turon, Marta Soler Vilamitjana, David Marsal Garví, Lluís F. (Lluís Francesc) Pallarés Curto, Jordi Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Alcubilla González, Ramón |
Keywords: | Pel·lícules fines Silici Estabilitat Semiconductors Deposició química en fase vapor Thin films Silicon Stability Semiconductors Chemical vapor deposition |
Issue Date: | 2001 |
Publisher: | Elsevier B.V. |
Abstract: | The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125 °C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been related to trapped charge in the active layer of the thin film transistor. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01608-4 |
It is part of: | Thin Solid Films, 2001, vol. 383, num. 1-2, p. 307-309 |
URI: | http://hdl.handle.net/2445/98400 |
Related resource: | http://dx.doi.org/10.1016/S0040-6090(00)01608-4 |
ISSN: | 0040-6090 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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