Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy

Serra-Miralles, J.; Andreu i Batallé, Jordi; Sardin, Georges; Roch i Cunill, Carles; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Esteve Pujol, Joan

Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98451

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DC Field	Value	Language
dc.contributor.author	Serra-Miralles, J.	-
dc.contributor.author	Andreu i Batallé, Jordi	-
dc.contributor.author	Sardin, Georges	-
dc.contributor.author	Roch i Cunill, Carles	-
dc.contributor.author	Asensi López, José Miguel	-
dc.contributor.author	Bertomeu i Balagueró, Joan	-
dc.contributor.author	Esteve Pujol, Joan	-
dc.date.accessioned	2016-05-09T17:31:46Z	-
dc.date.available	2016-05-09T17:31:46Z	-
dc.date.issued	1991	-
dc.identifier.issn	0921-4526	-
dc.identifier.uri	http://hdl.handle.net/2445/98451	-
dc.description.abstract	A study of thermal annealing of a-Si:H samples between 300 and 600°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550°C. The hydrogen content measured by thermal desorption spectroscopy evolves in the same temperature range, whereas the evolution of the hydrogen content deduced from the IR transmission spectra differs, decreasing sooner and vanishing already at about 450°C.	-
dc.format.extent	4 p.	-
dc.format.mimetype	application/pdf	-
dc.language.iso	eng	-
dc.publisher	Elsevier B.V.	-
dc.relation.isformatof	Versió postprint del document publicat a: http://dx.doi.org/10.1016/0921-4526(91)90136-3	-
dc.relation.ispartof	Physica B, 1991, vol. 170, num. 1-4, p. 269-272	-
dc.relation.uri	http://dx.doi.org/10.1016/0921-4526(91)90136-3	-
dc.rights	(c) Elsevier B.V., 1991	-
dc.source	Articles publicats en revistes (Física Aplicada)	-
dc.subject.classification	Espectroscòpia	-
dc.subject.classification	Silici	-
dc.subject.classification	Física de l'estat sòlid	-
dc.subject.classification	Semiconductors	-
dc.subject.other	Spectrum analysis	-
dc.subject.other	Silicon	-
dc.subject.other	Solid state physics	-
dc.subject.other	Semiconductors	-
dc.title	Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy	-
dc.type	info:eu-repo/semantics/article	-
dc.type	info:eu-repo/semantics/acceptedVersion	-
dc.identifier.idgrec	060261	-
dc.date.updated	2016-05-09T17:31:51Z	-
dc.rights.accessRights	info:eu-repo/semantics/openAccess	-
Appears in Collections:	Articles publicats en revistes (Física Aplicada)

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