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https://hdl.handle.net/2445/9848| Title: | Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers |
| Author: | Roura Grabulosa, Pere Bosch Estrada, José Morante i Lleonart, Joan Ramon |
| Keywords: | Electrònica de l'estat sòlid Propietats òptiques Luminescència Semiconductors Microscòpia electrònica de transmissió Solid state electronics Optical properties Photoluminescence Semiconductors Transmission electron microscopy |
| Issue Date: | 1992 |
| Publisher: | The American Physical Society |
| Abstract: | Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field. |
| Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453 |
| It is part of: | Physical Review B, 1992, vol. 46, núm. 16, p. 10453-10456. |
| URI: | https://hdl.handle.net/2445/9848 |
| Related resource: | http://dx.doi.org/10.1103/PhysRevB.46.10453 |
| ISSN: | 0163-1829 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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