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http://hdl.handle.net/2445/9851
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DC Field | Value | Language |
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dc.contributor.author | Asensi López, José Miguel | cat |
dc.contributor.author | Andreu i Batallé, Jordi | cat |
dc.date.accessioned | 2009-10-28T09:34:18Z | - |
dc.date.available | 2009-10-28T09:34:18Z | - |
dc.date.issued | 1993 | cat |
dc.identifier.issn | 0163-1829 | cat |
dc.identifier.uri | http://hdl.handle.net/2445/9851 | - |
dc.description.abstract | A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution. | eng |
dc.format.extent | 9 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | The American Physical Society | eng |
dc.relation.isformatof | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.47.13295 | cat |
dc.relation.ispartof | Physical Review B, 1993, vol. 47, núm. 20, p. 13295-13303. | eng |
dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.47.13295 | - |
dc.rights | (c) The American Physical Society, 1993 | eng |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Conductivitat elèctrica | cat |
dc.subject.classification | Propietats tèrmiques | cat |
dc.subject.classification | Semiconductors amorfs | cat |
dc.subject.other | Electric conductivity | eng |
dc.subject.other | Thermal properties | eng |
dc.subject.other | Amorphous semiconductors | eng |
dc.title | Equilibrium and nonequilibrium gap-state distribution in amorphous silicon | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 73518 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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