Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/9871
Title: | Configurational statistical model for the damaged structure of silicon oxide after ion implantation |
Author: | Garrido Beltrán, Lluís Samitier i Martí, Josep Morante i Lleonart, Joan Ramon Montserrat i Martí, Josep Domínguez, Carlos (Domínguez Horna) |
Keywords: | Efecte de les radiacions sobre els materials Fotoemissió Espectroscòpia de fotoelectrons Effect of radiation on materials Photoemission Photoelectron spectroscopy |
Issue Date: | 1994 |
Publisher: | The American Physical Society |
Abstract: | A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds. |
Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.49.14845 |
It is part of: | Physical Review B, 1994, vol. 49, núm. 21, p. 14845-14849. |
URI: | http://hdl.handle.net/2445/9871 |
Related resource: | http://dx.doi.org/10.1103/PhysRevB.49.14845 |
ISSN: | 0163-1829 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.