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http://hdl.handle.net/2445/98753
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DC Field | Value | Language |
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dc.contributor.author | Cifre, J. | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Puigdollers i González, Joaquim | - |
dc.contributor.author | Polo Trasancos, Ma. del Carmen | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.contributor.author | Lloret, A. | - |
dc.date.accessioned | 2016-05-23T13:48:11Z | - |
dc.date.available | 2016-05-23T13:48:11Z | - |
dc.date.issued | 1994 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://hdl.handle.net/2445/98753 | - |
dc.description.abstract | Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells. | - |
dc.format.extent | 7 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Springer Verlag | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1007/BF00331926 | - |
dc.relation.ispartof | Applied Physics A: Materials Science and Processing , 1994, vol. 59, num. 6, p. 645-651 | - |
dc.relation.uri | http://dx.doi.org/10.1007/BF00331926 | - |
dc.rights | (c) Springer Verlag, 1994 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Deposició en fase de vapor | - |
dc.subject.other | Thin films | - |
dc.subject.other | Silicon | - |
dc.subject.other | Vapor-plating | - |
dc.title | Polycrystalline silicon films obtained by hot-wire chemical vapour deposition | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 114374 | - |
dc.date.updated | 2016-05-11T14:36:48Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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114374.pdf | 9.37 MB | Adobe PDF | View/Open |
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