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http://hdl.handle.net/2445/99362
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DC Field | Value | Language |
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dc.contributor.author | Polo Trasancos, Ma. del Carmen | - |
dc.contributor.author | Peiró Martínez, Francisca | - |
dc.contributor.author | Cifre, J. | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Puigdollers i González, Joaquim | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2016-06-08T13:59:59Z | - |
dc.date.available | 2016-06-08T13:59:59Z | - |
dc.date.issued | 1995 | - |
dc.identifier.issn | 0951-3248 | - |
dc.identifier.uri | http://hdl.handle.net/2445/99362 | - |
dc.description.abstract | Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. | - |
dc.format.extent | 4 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Institute of Physics (IOP) | - |
dc.relation.isformatof | Reproducció del document publicat a: http://iopscience.iop.org/journal/1742-6596 | - |
dc.relation.ispartof | Institute of Physics Conference Series, 1995, vol. 146, p. 503-506 | - |
dc.rights | cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995 | - |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/es | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Creixement cristal·lí | - |
dc.subject.other | Silicon | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Thin films | - |
dc.subject.other | Crystal growth | - |
dc.title | Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 119500 | - |
dc.date.updated | 2016-06-08T14:00:04Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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File | Description | Size | Format | |
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119500.pdf | 305.27 kB | Adobe PDF | View/Open |
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