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| Issue Date | Title | Author(s) |
|---|---|---|
| 1992 | Light induced defects in thermal annealed hydrogenated amorphous silicon | Serra-Miralles, J.; Bertomeu i Balagueró, Joan; Sardin, Georges; Roch i Cunill, Carles; Asensi López, José Miguel; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 1993 | On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers | Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi |
| 2009 | Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC) | Villar, Fernando; Antony, Aldrin; Escarré i Palou, Jordi; Ibarz, D.; Roldán Molinero, Rubén; Stella, Marco; Muñoz Ramos, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan |
| 2008 | Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material | Barquinha, Pedro M. C.; Vilà i Arbonès, Anna Maria; Gonçalves, Gonçalo; Pereira, Luís M. N.; Martins, Rodrigo F. P.; Morante i Lleonart, Joan Ramon; Fortunato, Elvira M. C. |
| 1993 | Equilibrium and nonequilibrium gap-state distribution in amorphous silicon | Asensi López, José Miguel; Andreu i Batallé, Jordi |
| 1998 | Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules | Merten, Jens; Asensi López, José Miguel; Voz Sánchez, Cristóbal; Shah, A. V.; Platz, R.; Andreu i Batallé, Jordi |
| Jul-1997 | A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition | Roca i Cabarrocas, P. (Pere); Chevrier, J. B.; Huc, J.; Lloret, A.; Parey, J. Y.; Schmitt, J. P. M. |
| Mar-1987 | Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition | Andújar Bella, José Luis; Bertrán Serra, Enric; Canillas i Biosca, Adolf; Roch i Cunill, Carles; Morenza Gil, José Luis |
| 2010 | Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments | Kail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Alzina Sureda, Francesc; Roca i Cabarrocas, P. (Pere) |
| 1997 | Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces | Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi |
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