# name
Light induced defects in thermal annealed hydrogenated amorphous silicon

# metadata.dc.description.abstract[].value
The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy.

# metadata.dc.relation.ispartof[].value
Solar Energy Materials and Solar Cells, 1992, vol. 28, num. 1, p. 49-57

# metadata.dc.source[].value
Articles publicats en revistes (Física Aplicada)

# metadata.dc.title[].value
Light induced defects in thermal annealed hydrogenated amorphous silicon