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Synthesis and characterization of Ga2O3 and In2O3 nanowires

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Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2019, Tutors: Guillem Domènech Gil, Albert Romano Rodríguez

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Vapour-Liquid-Solid (VLS) mechanism is employed to grow Ga2O3 and In2O3 nanowires (NWs) using Ga2O3:C, In2O3:C and metallic In as precursor materials. A first attempt to fabricate heterostructures of Ga2O3/In2O3 NWs is also presented, by growing In2O3 NWs on previously grown Ga2O3 NWs. The NWs have been structurally characterized with Scanning Electron Microscopy and X-Ray diffraction. Moreover, gas sensors based on individual Ga2O3 NWs have been fabricated and tested under different concentrations of relative humidity diluted in synthetic air, demonstrating effectiveness in gas sensing

# metadata.dc.title[].value
Synthesis and characterization of Ga2O3 and In2O3 nanowires