# name
Application of a floating well concept to a latch-up-free, low-cost, smart power high-side switch technology

# metadata.dc.description.abstract[].value
The aim of this brief is to present an original design methodology that permits implementing latch-up-free smart power circuits on a very simple, cost-effective technology. The basic concept used for this purpose is letting float the wells of the MOS transistors most susceptible to initiate latch-up.

# metadata.dc.relation.ispartof[].value
IEEE Transactions on Electron Devices, 1993, vol. 40, núm. 7, p. 1340-1342.

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Application of a floating well concept to a latch-up-free, low-cost, smart power high-side switch technology