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Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films

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We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.

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(c) American Institute of Physics , 1991

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Articles publicats en revistes (Física Aplicada)

# metadata.dc.title[].value
Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films