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Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

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In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

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Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, vol. 159-160, p. 23-26

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Articles publicats en revistes (Física Aplicada)

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Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD