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Electronic structure and screening dynamics of ethene on single domain Si(001) from resonant inelastic X-ray scattering.

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We present a resonant inelastic x-ray scattering ~RIXS! study of a strongly bound adsorbate on a semiconductor
surface, C2H4 /Si(001). The valence electronic structure as well as the photon energy dependence in
RIXS can be studied without the dominating effect of dynamic metallic screening. We demonstrate that for this
strongly coupled system the RIXS spectrum resulting from a selective excitation into the unoccupied s CSi *
resonance can be interpreted with the help of density-functional calculations. In addition, we show how
excitation into different resonances leads to a significant photon energy dependence of the RIXS spectral
features, not seen in strongly coupled adsorbate systems on metals.

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Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.69.153408

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Articles publicats en revistes (Ciència dels Materials i Química Física)

# metadata.dc.title[].value
Electronic structure and screening dynamics of ethene on single domain Si(001) from resonant inelastic X-ray scattering.