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Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures

# metadata.dc.description.abstract[].value
Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the 
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 and 
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 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related 
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 transitions.

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures