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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911

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Applied Physics Letters, 2018, vol. 113, num. 183502

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(c) American Institute of Physics , 2018

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices