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Simulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO₃ thin films

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LaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission electron microscope - high-angle annular darkfield imaging (STEM-HAADF) contrast analysis and image simulations, Ruddlesden-Popper faulted configurations, with 1/2a<111> relative displacement of defect free perovskite blocks, are atomically modeled and simulated to disentangle the variation of Z-contrast in the experimental images

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Simulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO₃ thin films