# name
The valence band alignment at ultrathin SiO2/Si  interfaces

# metadata.dc.description.abstract[].value
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.

# metadata.dc.rights[].value
(c) American Institute of Physics , 1997

# metadata.dc.source[].value
Articles publicats en revistes (Història i Arqueologia)

# metadata.dc.title[].value
The valence band alignment at ultrathin SiO2/Si  interfaces