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Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process

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The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemical-vapor deposition (PECVD) of silane is reported. A nonlinear dependence of PL intensity on laser power of the form I a: P" with n as high as 7 has been found, indicating a multistep-multiphoton ex­citation process. To confi.rm this hypothesis a very detailed theoretical and experimental analysis has been performed. As a result, the lifetimes of several levels in the excitation chain have been determined, as well as the optical cross section (u). For the slowest level u= 3 X 10- 18 cm2 and the lifetime is as long as 400 ms. As the energy of the emitted photon is smaller than that of the excitation photon, a model in­volving a considerable nonradiative energy relaxation, together with a tunnel effect is proposed.

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Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.50.18124

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Articles publicats en revistes (Física Aplicada)

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Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process