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Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition

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Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.

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Institute of Physics Conference Series, 1995, vol. 146, p. 503-506

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cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995

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Articles publicats en revistes (Física Aplicada)

# metadata.dc.title[].value
Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition