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Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations

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We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads.

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Journal of Physics: Conference Series, 2015, vol. 609, num. 012002

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cc-by (c) Illera Robles, Sergio et al., 2015

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations