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HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices

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Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Cobos

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Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and hotoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown under different As4 pressures are studied, and the presence of different optoelectronic properties are discussed in relation to the crystalline structures and defects found.

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Màster Oficial - Nanociència i Nanotecnologia

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HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices