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Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach

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A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained

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Articles publicats en revistes (Física de la Matèria Condensada)

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Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach