# name
Electrical properties of individual tin oxide nanowires contacted to platinum electrodes

# metadata.dc.description.abstract[].value
A simple and useful experimental alternative to field-effect transistors for measuring electrical properties
 free electron concentration nd, electrical mobility  , and conductivity  in individual nanowires has been
developed. A combined model involving thermionic emission and tunneling through interface states is proposed
to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion
beam techniques. Current-voltage  I-V plots of single nanowires measured in both two- and four-probe
configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior
was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky
barriers, arising from the metal-semiconductor-metal  M-S-M junctions. Temperature-dependent I-V measurements
revealed effective Schottky barrier heights up to BE= 0.4 eV.

# metadata.dc.relation.isformatof[].value
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.76.085429

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.subject.other[].value
Electronic structure and electrical properties of surfaces

# metadata.dc.title[].value
Electrical properties of individual tin oxide nanowires contacted to platinum electrodes