# name
Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP

# metadata.dc.description.abstract[].value
The time dependence of the 
2
T
2
→
2
E photoluminescence transition of 
Ti
3
+
Ga
 in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time 
τ
0
=2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by 
Ti
3
+
Ga
 in the excited state whereas the results on p-type conducting samples suggest hole localization at the 
Ti
3
+
Ga
.

# metadata.dc.relation.isformatof[].value
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP