# name
Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers

# metadata.dc.description.abstract[].value
Optical-absorption measurements have been carried out on tensile and compressive 
In
x
Ga
1
−
x
As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband 
σ
HH
/
σ
LH
 is the key to knowing the origin of the microscopic inhomogeneities. So, 
σ
HH
/
σ
LH
<1 indicates the existence of composition inhomogeneities whereas 
σ
HH
/
σ
LH
=2.8 reveals an inhomogeneous strain field.

# metadata.dc.relation.isformatof[].value
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers