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Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

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Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

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Solar Energy Materials and Solar Cells, 2000, vol. 63, num. 3, p. 237-246

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Articles publicats en revistes (Física Aplicada)

# metadata.dc.title[].value
Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition