# name
Electrically active point defects in n-type 4H¿SiC

# metadata.dc.description.abstract[].value
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Electrically active point defects in n-type 4H¿SiC