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Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors

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By an analysis of the exchange of carriers through a semiconductor junction, a general relationship for the nonequilibrium population of the interface states in Schottky barrier diodes has been derived. Based on this relationship, an analytical expression for the ideality factor valid in the whole range of applied bias has been given. This quantity exhibits two different behaviours depending on the value of the applied bias with respect to a critical voltage. This voltage, which depends on the properties of the interfacial layer, constitutes a new parameter to complete the characterization of these junctions. A simple interpretation of the different behaviours of the ideality factor has been given in terms of the nonequilibrium charging properties of interface states, which in turn explains why apparently different approaches have given rise to similar results. Finally, the relevance of our results has been considered on the determination of the density of interface states from nonideal current-voltage characteristics and in the evaluation of the effects of the interfacial layer thickness in metal-insulator-semiconductor tunnelling diodes.

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Journal of Applied Physics, 1997, vol. 81, núm. 6, p. 2674

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Articles publicats en revistes (Física de la Matèria Condensada)

# metadata.dc.title[].value
Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors