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Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

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Kochelap, V. A. (Viacheslav Aleksandrovich)

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We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc.,   operating under strongly inhomogeneous distributions of the electric field and charge concentration

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Articles publicats en revistes (Física de la Matèria Condensada)

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Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach